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12/01/09 www.irf.com 1 IRF7815PBF hexfet power mosfet notes through are on page 9 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a so-8 benefits very low r ds(on) at 10v v gs low gate charge fully characterized avalanche voltage and current 20v v gs max. gate rating applications synchronous mosfet for notebook processor power synchronous rectifier mosfet for isolated dc-dc converters in networking systems v dss r ds(on) max qg (typ.) 150v 43m @v gs = 10v 25nc absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w a c v -55 to + 150 2.5 0.02 1.6 max. 5.1 4.1 41 20 150
2 www.irf.com static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 150 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.17 ??? v/c r ds(on) static drain-to-source on-resistance ??? 34 43 m ? v gs(th) gate threshold voltage 3.0 4.0 5.0 v ? v gs(th) gate threshold voltage coefficient ??? -12.2 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 8.2 ??? ??? s q g total gate charge ??? 25 38 q gs1 pre-vth gate-to-source charge ??? 6.5 ??? q gs2 post-vth gate-to-source charge ??? 1.3 ??? q gs gate-to-source charge ??? 7.8 ??? q gd gate-to-drain charge ??? 7.4 ??? see figs. 6, 16a & 16b q godr gate charge overdrive ??? 9.8 ??? q sw switch char g e (q gs2 + q gd ) ??? 8..7 ??? q oss output charge ??? 10 ??? nc r g gate resistance ??? 1.02 ??? ? t d(on) turn-on delay time ??? 8.4 ??? t r rise time ??? 3.2 ??? t d(off) turn-off delay time ??? 14 ??? t f fall time ??? 8.3 ??? c iss input capacitance ??? 1647 ??? c oss output capacitance ??? 129 ??? c rss reverse transfer capacitance ??? 30 ??? avalanche characteristics parameter units e as si n gl e p u l se a va l anc h e e ner gy mj i ar a va l anc h e c urrent a diode characteristics parameter min. t y p. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 41 62 ns q rr reverse recovery charge ??? 213 320 nc i d = 3.1a v gs = 0v v ds = 75v pf typ. ??? r g = 1.8 ? ??? v ds = 150v, v gs = 0v, t j = 125c v ds = v gs , i d = 100a v ds = 150v, v gs = 0v v gs = 10v v ds = 75v v gs = 20v v gs = -20v v ds = 50v, i d = 3.1a t j = 25c, i f = 3.1a, v dd = 75v di/dt = 300a/s t j = 25c, i s = 3.1a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v ds = 16v, v gs = 0v v dd = 75v, v gs = 10v i d = 3.1a conditions see figs. 15a & 15b max. 529 3.1 ? = 1.0mhz conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 3.1a a na nc ns a 2.3 ??? ??? ??? ??? 41
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 60s pulse width tj = 150c vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 60s p ulse width tj = 25c 5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.1a v gs = 10v
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 5 10 15 20 25 30 35 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 120v v ds = 75v vds= 30v i d = 3.1a 0 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.3 0.5 0.7 0.9 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 3.0 4.0 5.0 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100ua i d = 150ua i d = 250ua id = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a ri (c/w) i (sec) 2.8482 0.012383 16.4171 36.75014 20.8292 5.677801 9.8220 0.525832 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 6 i d , d r a i n c u r r e n t ( a )
6 www.irf.com fig 13c. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 15b. switching time waveforms fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 15a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 % + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 500 1000 1500 2000 2500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.30a 0.44a bottom 3.1a 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 20 30 40 50 60 70 80 90 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 5.1a t j = 25c t j = 125c
www.irf.com 7 fig 16a. gate charge test circuit fig 16b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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note: for the most current drawing ple ase refer to ir website at http://www .irf.com/package/
www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/2009 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel note: for the most current drawing please refer to ir website at http://www .irf.com/package/
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 110mh, r g = 25 ? , i as = 3.1a pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c.

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